bipolar transistors is presented. The methodology is
efficient in generating extensive model libraries for
RFIC design. Experimental results for a production
RF BiCMOS process are provided, confirming the
quality of the model library generated with the
methodology. Finally, an example of first-pass design
success enabled by this methodology is presented,
demonstrating the usefulness of the modeling
methodology for RF IC design.
Acknowledgement
The authors are especially thankful to the RFIC
Design Group and the Advanced Process Technology
(APT) Development within Conexant for their support.
References
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